Modeling of Amorphous InGaZnO Thin Film Transistors
Charlene Chen, T. C. (Richard) Fung and Jerzy Kanicki
Top view of an a-InGaZnO TFT
Amorphous metal oxide semiconductor (AMOS) thin film transistors (TFTs), due to their high uniformity over large area, low processing temperature, high field-effect mobility, high current on-off ratio and low subthreshold swing, are showing increasing promise as suitable devices for future flat panel displays. A physically based device model which parameters can be extracted easily and can be directly related to the material properties of the TFT is essential for circuit simulations. In this project, we developed a DC SPICE model for a-InGaZnO TFTs based on RPI a-Si TFT model. From the simulation results shown below, we can see that this model is able to reproduce very well our experimental data. The ultimate goal of this project is to design advanced a-InGaZnO pixel circuits for AM-OLEDs.
Simulation results of a-InGaZnO TFT transfer characteristic (left) and output characteristic (right), using RPI a-Si TFT SPICE model.
This project is supported by Canon Research Center, Tokyo, Japan.
