Asymmetric Electrical Properties of Half - Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays
Hojin Lee, Che-Hung Liu and Jerzy Kanicki
First, two types of half-Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active matrix liquid-crystal displays (AM-LCD). Then we investigated the a-Si:H half-Corbino TFTs asymmetric electrical characteristics under different drain-bias conditions. In comparison to half-Corbino TFT with unpatterned gate electrode, the device parasitic capacitance can be significantly reduced by patterning the gate electrode for same device dimension, while the sub-threshold swing and threshold voltage remain identical for same bias condition. Moreover, the OFF-current remains below 0.1 pA for all device configurations. Later on, we investigated their potential applications to AM-LCDs as switching TFT and to AM-OLEDs as switching and driving TFTs. To our best knowledge, this research describes the first investigation of the half-Corbino a-Si:H TFTs’ asymmetric electrical characteristics and their possible application to flat panel displays.
