Flexible Thin Film CIGS Solar Cells by Low Temperature Sputtering Method: Simulation and Experiment Results
Rui Zhang and Jerzy Kanicki
Due to the advantages of the thin film Cu(InGa)Se2 (CIGS) (figure on right) solar cell, such as a low cost, a high energy conversion efficiency, and environment friendly, this device is considered as very promising candidate for future flexible solar cells. First the Cu:In/Ga is sputtered at low temperature in the presence of Na and then annealed in Se at higher temperature. The flexible stainless steel substrates are used for these devices.
We measured for CIGS solar cell fabricated by low temperature sputtering method on stainless steel substrate external efficiency of ~13.0%. Experimental data indicates that the quantum efficiency has a high response for long wavelength light. Current density – voltage measurements under illumination resulted in short circuit current density of 32 mA/cm^2 and open circuit voltage of 0.55V. We also performed modeling of this device establishing that both experimental and calculated data are consistent with each other (see figures below).
Due to the advantages of the thin film Cu(InGa)Se2 (CIGS) (figure on right) solar cell, such as a low cost, a high energy conversion efficiency, and environment friendly, this device is considered as very promising candidate for future flexible solar cells. First the Cu:In/Ga is sputtered at low temperature in the presence of Na and then annealed in Se at higher temperature. The flexible stainless steel substrates are used for these devices. 